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Evidence for ferromagnetic coupling at the doped topological insulator / ferrimagnetic insulator interface Evidence for ferromagnetic coupling at the doped topological insulator / ferrimagnetic insulator interface

机译:掺杂的拓扑绝缘体/亚铁磁绝缘体界面处的铁磁耦合的证据掺杂的拓扑绝缘体/亚铁磁绝缘体界面处的铁磁耦合的证据

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摘要

One of the major obstacles of the magnetic topological insulators (TIs) impeding their practical use is the low Curie temperature (Tc). Very recently, we have demonstrated the enhancement of the magnetic ordering in Cr-doped Bi2Se3 by means of proximity to the high-Tcferrimagneticinsulator (FMI) Y3Fe5O12 and found a large and rapidly decreasing penetration depth of the proximity effect, suggestive of a different carrier propagation process near the TI surface. Here we further present a study of the interfacial magnetic interaction of this TI/FMI heterostrucutre. The synchrotron-based X-ray magnetic circular dichroism (XMCD) technique was used to probe the nature of the exchange coupling of the Bi2−xCrxSe3/Y3Fe5O12 interface. We found that the Bi2−xCrxSe3grown on Y3Fe5O12(111) predominately contains Cr3+ cations, and the spin direction of the Cr3+ is aligned parallel to that of tetrahedral Fe3+ of the YIG, revealing a ferromagnetic exchange coupling between the Bi2−xCrxSe3 and the Y3Fe5O12.
机译:磁性拓扑绝缘体(TI)阻碍其实际使用的主要障碍之一是居里温度(Tc)低。最近,我们已经证明了通过与高TcFe磁性绝缘体(FMI)Y3Fe5O12的接近可以增强Cr掺杂的Bi2Se3中的磁有序性,并且发现了接近效应的大且快速下降的穿透深度,这表明了不同的载流子传播在TI表面附近进行处理。在这里,我们进一步介绍了这种TI / FMI异质结构的界面磁相互作用的研究。基于同步加速器的X射线磁性圆二色性(XMCD)技术用于探测Bi2-xCrxSe3 / Y3Fe5O12接口的交换耦合的性质。我们发现,生长在Y3Fe5O12(111)上的Bi2-xCrxSe3主要包含Cr3 +阳离子,并且Cr3 +的自旋方向与YIG的四面体Fe3 +平行,从而揭示了Bi2-xCrxSe3和Y3Fe5O12之间的铁磁交换耦合。

著录项

  • 作者

    Liu, Wenqing;

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  • 年度 2016
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  • 原文格式 PDF
  • 正文语种 eng
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